IOCAS-IR  > 海洋环境腐蚀与与生物污损重点实验室
Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping
Jing, Jiangping1,2,3; Chen, Zhuoyuan1,2,3; Feng, Chang2
2019-02-20
Source PublicationELECTROCHIMICA ACTA
ISSN0013-4686
Volume297Pages:488-496
Corresponding AuthorChen, Zhuoyuan(zychen@qdio.ac.cn)
AbstractGraphitic carbon nitride (g-C3N4) usually shows amphoteric property in a neutral solution. In this work, a K&I co-doped g-C3N4 is prepared by simply sintering the mixture of dicyandiamine, KI and I-2. The K&I co-doping modulates the band structure of g-C3N4 with pulling the Fermi level toward its conduction band minimum. The obtained K&I co-doped g-C3N4 (K&I-C3N4) generates positive photocurrents over the whole investigated potential range, exhibiting a typical n-type semiconductor characteristic. Therefore, the K&I co-doping transforms the g-C3N4 from amphoteric to n-type semiconductor. Also, the prepared K&I-C3N4 shows widened light absorption range and enhanced separation efficiency of the photogenerated charge carriers, which results in the dramatically enhanced photoelectrochemical performance. (C) 2018 Elsevier Ltd. All rights reserved.
KeywordGraphitic carbon nitride p/n type Fermi level K&I co-doping Photoelectrochemical performance
DOI10.1016/j.electacta.2018.12.015
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[41576114] ; National Natural Science Foundation of China[41376126] ; Qingdao Innovative Leading Talent Foundation[15-10-3-15-(39)-zch] ; Qingdao Science and Technology Achievement Transformation Guidance Plan (Applied Basic Research)[14-2-4-4-jch] ; State Key Laboratory for Marine Corrosion and Protection, Luoyang Ship Material Research Institute, China[614290101011703]
WOS Research AreaElectrochemistry
WOS SubjectElectrochemistry
WOS IDWOS:000455642500054
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.qdio.ac.cn/handle/337002/160698
Collection海洋环境腐蚀与与生物污损重点实验室
Corresponding AuthorChen, Zhuoyuan
Affiliation1.Chinese Acad Sci, Inst Oceanol, Key Lab Marine Environm Corros & Biofouling, 7 Nanhai Rd, Qingdao 266071, Peoples R China
2.Luoyang Ship Mat Res Inst, State Key Lab Marine Corros & Protect, Wenhai Rd, Qingdao 266237, Peoples R China
3.Chinese Acad Sci, Ctr Ocean Mega Sci, 7 Nanhai Rd, Qingdao 266071, Peoples R China
First Author AffilicationInstitute of Oceanology, Chinese Academy of Sciences
Corresponding Author AffilicationInstitute of Oceanology, Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Jing, Jiangping,Chen, Zhuoyuan,Feng, Chang. Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping[J]. ELECTROCHIMICA ACTA,2019,297:488-496.
APA Jing, Jiangping,Chen, Zhuoyuan,&Feng, Chang.(2019).Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping.ELECTROCHIMICA ACTA,297,488-496.
MLA Jing, Jiangping,et al."Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping".ELECTROCHIMICA ACTA 297(2019):488-496.
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