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| Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping | |
| Jing, Jiangping1,2,3; Chen, Zhuoyuan1,2,3; Feng, Chang2 | |
| 2019-02-20 | |
| Source Publication | ELECTROCHIMICA ACTA
 |
| ISSN | 0013-4686 |
| Volume | 297Pages:488-496 |
| Corresponding Author | Chen, Zhuoyuan(zychen@qdio.ac.cn) |
| Abstract | Graphitic carbon nitride (g-C3N4) usually shows amphoteric property in a neutral solution. In this work, a K&I co-doped g-C3N4 is prepared by simply sintering the mixture of dicyandiamine, KI and I-2. The K&I co-doping modulates the band structure of g-C3N4 with pulling the Fermi level toward its conduction band minimum. The obtained K&I co-doped g-C3N4 (K&I-C3N4) generates positive photocurrents over the whole investigated potential range, exhibiting a typical n-type semiconductor characteristic. Therefore, the K&I co-doping transforms the g-C3N4 from amphoteric to n-type semiconductor. Also, the prepared K&I-C3N4 shows widened light absorption range and enhanced separation efficiency of the photogenerated charge carriers, which results in the dramatically enhanced photoelectrochemical performance. (C) 2018 Elsevier Ltd. All rights reserved. |
| Keyword | Graphitic carbon nitride p/n type Fermi level K&I co-doping Photoelectrochemical performance |
| DOI | 10.1016/j.electacta.2018.12.015 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[41576114] ; National Natural Science Foundation of China[41376126] ; Qingdao Innovative Leading Talent Foundation[15-10-3-15-(39)-zch] ; Qingdao Science and Technology Achievement Transformation Guidance Plan (Applied Basic Research)[14-2-4-4-jch] ; State Key Laboratory for Marine Corrosion and Protection, Luoyang Ship Material Research Institute, China[614290101011703] |
| WOS Research Area | Electrochemistry |
| WOS Subject | Electrochemistry |
| WOS ID | WOS:000455642500054 |
| Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.qdio.ac.cn/handle/337002/160698 |
| Collection | 海洋环境腐蚀与与生物污损重点实验室 |
| Corresponding Author | Chen, Zhuoyuan |
| Affiliation | 1.Chinese Acad Sci, Inst Oceanol, Key Lab Marine Environm Corros & Biofouling, 7 Nanhai Rd, Qingdao 266071, Peoples R China 2.Luoyang Ship Mat Res Inst, State Key Lab Marine Corros & Protect, Wenhai Rd, Qingdao 266237, Peoples R China 3.Chinese Acad Sci, Ctr Ocean Mega Sci, 7 Nanhai Rd, Qingdao 266071, Peoples R China |
| First Author Affilication | Institute of Oceanology, Chinese Academy of Sciences |
| Corresponding Author Affilication | Institute of Oceanology, Chinese Academy of Sciences |
| Recommended Citation GB/T 7714 | Jing, Jiangping,Chen, Zhuoyuan,Feng, Chang. Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping[J]. ELECTROCHIMICA ACTA,2019,297:488-496. |
| APA | Jing, Jiangping,Chen, Zhuoyuan,&Feng, Chang.(2019).Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping.ELECTROCHIMICA ACTA,297,488-496. |
| MLA | Jing, Jiangping,et al."Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping".ELECTROCHIMICA ACTA 297(2019):488-496. |
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