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Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 851, 页码: 9
作者:  Jing, Jiangping;  Chen, Zhuoyuan;  Feng, Chang;  Sun, Mengmeng;  Hou, Jian
Adobe PDF(2048Kb)  |  收藏  |  浏览/下载：171/0  |  提交时间：2021/04/12
Graphitic carbon nitride  Photoelectrochemical cathodic protection  p/n type  Doping  Photocurrent direction  
Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping 期刊论文
ELECTROCHIMICA ACTA, 2019, 卷号: 297, 页码: 488-496
作者:  Jing, Jiangping;  Chen, Zhuoyuan;  Feng, Chang
Adobe PDF(2019Kb)  |  收藏  |  浏览/下载：281/0  |  提交时间：2019/08/27
Graphitic carbon nitride p/n type  Fermi level  K&I co-doping  Photoelectrochemical performance