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Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 851, 页码: 9
作者:  Jing, Jiangping;  Chen, Zhuoyuan;  Feng, Chang;  Sun, Mengmeng;  Hou, Jian
Adobe PDF(2048Kb)  |  收藏  |  浏览/下载：176/0  |  提交时间：2021/04/12
Graphitic carbon nitride  Photoelectrochemical cathodic protection  p/n type  Doping  Photocurrent direction  
Graphitic Carbon Nitride Prepared by Rapid Recrystallization for Photoelectrochemical Anticorrosion 期刊论文
ACS APPLIED NANO MATERIALS, 2019, 卷号: 2, 期号: 12, 页码: 7559-7565
作者:  Li, Wanfeng;  Wang, Yi;  Yang, Xiaoyu;  Liu, Faqian;  Li, Weihua
Adobe PDF(5019Kb)  |  收藏  |  浏览/下载：272/0  |  提交时间：2020/03/20
graphitic carbon nitride  multilayer homojunction structure  rapid recrystallization  photoelectrochemical cathodic protection  carbon steel  
Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping 期刊论文
ELECTROCHIMICA ACTA, 2019, 卷号: 297, 页码: 488-496
作者:  Jing, Jiangping;  Chen, Zhuoyuan;  Feng, Chang
Adobe PDF(2019Kb)  |  收藏  |  浏览/下载：291/0  |  提交时间：2019/08/27
Graphitic carbon nitride p/n type  Fermi level  K&I co-doping  Photoelectrochemical performance