Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping
Jing, Jiangping1,2,3; Chen, Zhuoyuan1,2,3; Feng, Chang2
2019-02-20
发表期刊ELECTROCHIMICA ACTA
ISSN0013-4686
卷号297页码:488-496
通讯作者Chen, Zhuoyuan(zychen@qdio.ac.cn)
摘要Graphitic carbon nitride (g-C3N4) usually shows amphoteric property in a neutral solution. In this work, a K&I co-doped g-C3N4 is prepared by simply sintering the mixture of dicyandiamine, KI and I-2. The K&I co-doping modulates the band structure of g-C3N4 with pulling the Fermi level toward its conduction band minimum. The obtained K&I co-doped g-C3N4 (K&I-C3N4) generates positive photocurrents over the whole investigated potential range, exhibiting a typical n-type semiconductor characteristic. Therefore, the K&I co-doping transforms the g-C3N4 from amphoteric to n-type semiconductor. Also, the prepared K&I-C3N4 shows widened light absorption range and enhanced separation efficiency of the photogenerated charge carriers, which results in the dramatically enhanced photoelectrochemical performance. (C) 2018 Elsevier Ltd. All rights reserved.
关键词Graphitic carbon nitride p/n type Fermi level K&I co-doping Photoelectrochemical performance
DOI10.1016/j.electacta.2018.12.015
收录类别SCI
语种英语
资助项目National Natural Science Foundation of China[41576114] ; National Natural Science Foundation of China[41376126] ; Qingdao Innovative Leading Talent Foundation[15-10-3-15-(39)-zch] ; Qingdao Science and Technology Achievement Transformation Guidance Plan (Applied Basic Research)[14-2-4-4-jch] ; State Key Laboratory for Marine Corrosion and Protection, Luoyang Ship Material Research Institute, China[614290101011703] ; National Natural Science Foundation of China[41576114] ; National Natural Science Foundation of China[41376126] ; Qingdao Innovative Leading Talent Foundation[15-10-3-15-(39)-zch] ; Qingdao Science and Technology Achievement Transformation Guidance Plan (Applied Basic Research)[14-2-4-4-jch] ; State Key Laboratory for Marine Corrosion and Protection, Luoyang Ship Material Research Institute, China[614290101011703]
WOS研究方向Electrochemistry
WOS类目Electrochemistry
WOS记录号WOS:000455642500054
出版者PERGAMON-ELSEVIER SCIENCE LTD
引用统计
被引频次:33[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.qdio.ac.cn/handle/337002/160698
专题海洋环境腐蚀与生物污损重点实验室
通讯作者Chen, Zhuoyuan
作者单位1.Chinese Acad Sci, Inst Oceanol, Key Lab Marine Environm Corros & Biofouling, 7 Nanhai Rd, Qingdao 266071, Peoples R China
2.Luoyang Ship Mat Res Inst, State Key Lab Marine Corros & Protect, Wenhai Rd, Qingdao 266237, Peoples R China
3.Chinese Acad Sci, Ctr Ocean Mega Sci, 7 Nanhai Rd, Qingdao 266071, Peoples R China
第一作者单位中国科学院海洋研究所
通讯作者单位中国科学院海洋研究所
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Jing, Jiangping,Chen, Zhuoyuan,Feng, Chang. Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping[J]. ELECTROCHIMICA ACTA,2019,297:488-496.
APA Jing, Jiangping,Chen, Zhuoyuan,&Feng, Chang.(2019).Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping.ELECTROCHIMICA ACTA,297,488-496.
MLA Jing, Jiangping,et al."Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping".ELECTROCHIMICA ACTA 297(2019):488-496.
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