Facile in situ growth of photoactive,beta-Bi2O3 films

doi:10.1016/j.jtice.2017.03.037

	Facile in situ growth of photoactive,beta-Bi2O3 films
	Wang, Yi1 ; Long, Yang1,2 ; Zhang, Dun 1
	2017-06-01
发表期刊	JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS
卷号	75 页码:183-188
文章类型	Article
摘要	Photoactive beta-Bi2O3 films with oriented microstructure are fabricated by calcination of basic bismuth nitrate precursor films on the Cu surface synthesized using in situ growth method. The crystal structure and morphology can be tailored by controlling the calcination temperature. The,beta-Bi2O3 film heated at 550 degrees C has a stable highest photoinduced current density of 0.35 mA/cm(2) at a -0.40 V applied bias versus Ag/Agcl and excellent cyclic stability. This long-term stability of the beta-Bi2O3 film is benefiting from its chemical and crystal stability. Therefore, beta-Bi2O3 films fabricated using this strategy have great potential use of energy conversion, environment protection and biofouling control. (C) 2017 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.
关键词	Bi2o3 Semiconductors Films In Situ Growth Calcination Photoactive
DOI	10.1016/j.jtice.2017.03.037
收录类别	SCI
语种	英语
WOS记录号	WOS:000405879600021
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
版本	出版稿
条目标识符	http://ir.qdio.ac.cn/handle/337002/137073
专题	海洋环境腐蚀与生物污损重点实验室
作者单位	1.Chinese Acad Sci, Inst Oceanol, Key Lab Marine Environm Corros & Biofouling, Qingdao, Peoples R China 2.Univ Chinese Acad Sci, Beijing, Peoples R China
第一作者单位	中国科学院海洋研究所
推荐引用方式 GB/T 7714	Wang, Yi,Long, Yang,Zhang, Dun. Facile in situ growth of photoactive,beta-Bi2O3 films[J]. JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS,2017,75:183-188.
APA	Wang, Yi,Long, Yang,&Zhang, Dun.(2017).Facile in situ growth of photoactive,beta-Bi2O3 films.JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS,75,183-188.
MLA	Wang, Yi,et al."Facile in situ growth of photoactive,beta-Bi2O3 films".JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS 75(2017):183-188.

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