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Facile in situ growth of photoactive,beta-Bi2O3 films
Wang, Yi1; Long, Yang1,2; Zhang, Dun1
2017-06-01
发表期刊JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS
卷号75页码:183-188
文章类型Article
摘要Photoactive beta-Bi2O3 films with oriented microstructure are fabricated by calcination of basic bismuth nitrate precursor films on the Cu surface synthesized using in situ growth method. The crystal structure and morphology can be tailored by controlling the calcination temperature. The,beta-Bi2O3 film heated at 550 degrees C has a stable highest photoinduced current density of 0.35 mA/cm(2) at a -0.40 V applied bias versus Ag/Agcl and excellent cyclic stability. This long-term stability of the beta-Bi2O3 film is benefiting from its chemical and crystal stability. Therefore, beta-Bi2O3 films fabricated using this strategy have great potential use of energy conversion, environment protection and biofouling control. (C) 2017 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.
关键词Bi2o3 Semiconductors Films In Situ Growth Calcination Photoactive
DOI10.1016/j.jtice.2017.03.037
收录类别SCI
语种英语
WOS记录号WOS:000405879600021
引用统计
文献类型期刊论文
版本出版稿
条目标识符http://ir.qdio.ac.cn/handle/337002/137073
专题海洋腐蚀与防护研究发展中心
作者单位1.Chinese Acad Sci, Inst Oceanol, Key Lab Marine Environm Corros & Biofouling, Qingdao, Peoples R China
2.Univ Chinese Acad Sci, Beijing, Peoples R China
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Wang, Yi,Long, Yang,Zhang, Dun. Facile in situ growth of photoactive,beta-Bi2O3 films[J]. JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS,2017,75:183-188.
APA Wang, Yi,Long, Yang,&Zhang, Dun.(2017).Facile in situ growth of photoactive,beta-Bi2O3 films.JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS,75,183-188.
MLA Wang, Yi,et al."Facile in situ growth of photoactive,beta-Bi2O3 films".JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS 75(2017):183-188.
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