IOCAS-IR

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Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 851, 页码: 9
作者:  Jing, Jiangping;  Chen, Zhuoyuan;  Feng, Chang;  Sun, Mengmeng;  Hou, Jian
Adobe PDF(2048Kb)  |  收藏  |  浏览/下载:176/0  |  提交时间:2021/04/12
Graphitic carbon nitride  Photoelectrochemical cathodic protection  p/n type  Doping  Photocurrent direction  
Using the photoinduced volt-ampere curves to study the p/n types of the corrosion products with semiconducting properties 期刊论文
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2021, 卷号: 881, 页码: 10
作者:  Jing, Jiangping;  Chen, Zhuoyuan;  Feng, Chang
Adobe PDF(3610Kb)  |  收藏  |  浏览/下载:182/0  |  提交时间:2021/06/24
Photoinduced volt-ampere curve  Semiconductor type of corrosion products  Photogenerated electron  Photoelectrochemical effect  Electron transfer direction  
Enhanced photocatalytic performance of the MoS2/g-C3N4 heterojunction composite prepared by vacuum freeze drying method 期刊论文
JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY, 2020, 卷号: 390, 页码: 10
作者:  Tian, Jing;  Chen, Zhuoyuan;  Jing, Jiangping;  Feng, Chang;  Sun, Mengmeng;  Li, Weibing
Adobe PDF(3205Kb)  |  收藏  |  浏览/下载:151/0  |  提交时间:2020/09/22
g-C3N4  MoS2/g-C3N4  Heterojunction structure  Vacuum freeze drying method  Photocatalytic hydrogen production