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Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 851, 页码: 9
作者:  Jing, Jiangping;  Chen, Zhuoyuan;  Feng, Chang;  Sun, Mengmeng;  Hou, Jian
Adobe PDF(2048Kb)  |  收藏  |  浏览/下载：220/0  |  提交时间：2021/04/12
Graphitic carbon nitride  Photoelectrochemical cathodic protection  p/n type  Doping  Photocurrent direction  
Enhanced photoelectrochemical cathodic protection performance of g-C3N4 caused by the co-modification with N defects and C deposition 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 卷号: 30, 期号: 16, 页码: 15267-15276
作者:  Zhang, Qingji;  Jing, Jiangping;  Chen, Zhuoyuan;  Sun, Mengmeng;  Li, Jiarun;  Li, Yan;  Xu, Likun
Adobe PDF(1886Kb)  |  收藏  |  浏览/下载：308/0  |  提交时间：2019/11/14