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| Enhanced photoelectrochemical cathodic protection performance of g-C3N4 caused by the co-modification with N defects and C deposition | |
Zhang, Qingji1; Jing, Jiangping2,4,5; Chen, Zhuoyuan2,3,4,5; Sun, Mengmeng2,4,5; Li, Jiarun2,4,5 ; Li, Yan1; Xu, Likun3
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| 2019-08-01 | |
| 发表期刊 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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| ISSN | 0957-4522 |
| 卷号 | 30期号:16页码:15267-15276 |
| 通讯作者 | Chen, Zhuoyuan(zychen@qdio.ac.cn) ; Li, Yan(yanlee@upc.edu.cn) |
| 摘要 | g-C3N4 is a promising material for the application in the area of photoelectrochemical cathodic protection. However, it suffers from limited light absorption and lower charge separation efficiency. In this work, a N defects and C deposition co-modified g-C3N4, C-g-C3Nx, was prepared by NaOH-assisted sintering and ethanol-assisted hydrothermal treatment. The presence of N defects and C deposition was verified by the XRD, SEM and XPS tests. The N defects changed the band structure of g-C3N4 by lowering down the conduction band position, therefore widening the light absorption range of g-C3N4. In addition, the N defects and C deposition co-modification promotes the charge transfer process of g-C3N4, leading to increased separation efficiency of the photogenerated charge carriers. Therefore, C-g-C3Nx shows enhanced photoelectrochemical cathodic protection performance for the coupled 316L stainless steel. It can provide a photoinduced potential drop of 120 mV and a photoinduced current density of 9.1 mu A cm(-2), which is three times that of pristine g-C3N4. |
| DOI | 10.1007/s10854-019-01899-5 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[41676069] ; National Natural Science Foundation of China[41576114] ; National Natural Science Foundation of China[41376126] ; Qingdao Innovative Leading Talent Foundation[15-10-3-15-(39)-zch] ; Qingdao Science and Technology Achievement Transformation Guidance Plan (Applied Basic Research)[14-2-4-4-jch] ; State Key Laboratory for Marine Corrosion and Protection, Luoyang Ship Material Research Institute, China[614290101011703] ; National Natural Science Foundation of China[41676069] ; National Natural Science Foundation of China[41576114] ; National Natural Science Foundation of China[41376126] ; Qingdao Innovative Leading Talent Foundation[15-10-3-15-(39)-zch] ; Qingdao Science and Technology Achievement Transformation Guidance Plan (Applied Basic Research)[14-2-4-4-jch] ; State Key Laboratory for Marine Corrosion and Protection, Luoyang Ship Material Research Institute, China[614290101011703] |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS记录号 | WOS:000480558400045 |
| 出版者 | SPRINGER |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.qdio.ac.cn/handle/337002/162355 |
| 专题 | 海洋环境腐蚀与生物污损重点实验室 |
| 通讯作者 | Chen, Zhuoyuan; Li, Yan |
| 作者单位 | 1.China Univ Petr, Sch Mat Sci & Engn, 66 Changjiang West Rd, Qingdao 266580, Shandong, Peoples R China 2.Chinese Acad Sci, Inst Oceanol, Key Lab Marine Environm Corros & Biofouling, 7 Nanhai Rd, Qingdao 266071, Shandong, Peoples R China 3.Luoyang Ship Mat Res Inst, State Key Lab Marine Corros & Protect, Wenhai Rd, Qingdao 266237, Shandong, Peoples R China 4.Chinese Acad Sci, Ctr Ocean Mega Sci, 7 Nanhai Rd, Qingdao 266071, Shandong, Peoples R China 5.Pilot Natl Lab Marine Sci & Technol Qingdao, Open Studio Marine Corros & Protect, 1 Wenhai Rd, Qingdao 266237, Shandong, Peoples R China |
| 通讯作者单位 | 中国科学院海洋研究所 |
| 推荐引用方式 GB/T 7714 | Zhang, Qingji,Jing, Jiangping,Chen, Zhuoyuan,et al. Enhanced photoelectrochemical cathodic protection performance of g-C3N4 caused by the co-modification with N defects and C deposition[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2019,30(16):15267-15276. |
| APA | Zhang, Qingji.,Jing, Jiangping.,Chen, Zhuoyuan.,Sun, Mengmeng.,Li, Jiarun.,...&Xu, Likun.(2019).Enhanced photoelectrochemical cathodic protection performance of g-C3N4 caused by the co-modification with N defects and C deposition.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,30(16),15267-15276. |
| MLA | Zhang, Qingji,et al."Enhanced photoelectrochemical cathodic protection performance of g-C3N4 caused by the co-modification with N defects and C deposition".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 30.16(2019):15267-15276. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| Zhang2019_Article_En（1886KB） | 期刊论文 | 出版稿 | 限制开放 | CC BY-NC-SA | 浏览 | |
| Enhanced photoelectr（1886KB） | 期刊论文 | 出版稿 | 限制开放 | CC BY-NC-SA | 浏览 | |
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