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Enhanced photoelectrochemical cathodic protection performance of g-C3N4 caused by the co-modification with N defects and C deposition
Zhang, Qingji1; Jing, Jiangping2,4,5; Chen, Zhuoyuan2,3,4,5; Sun, Mengmeng2,4,5; Li, Jiarun2,4,5; Li, Yan1; Xu, Likun3
2019-08-01
Source PublicationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN0957-4522
Volume30Issue:16Pages:15267-15276
Corresponding AuthorChen, Zhuoyuan(zychen@qdio.ac.cn) ; Li, Yan(yanlee@upc.edu.cn)
Abstractg-C3N4 is a promising material for the application in the area of photoelectrochemical cathodic protection. However, it suffers from limited light absorption and lower charge separation efficiency. In this work, a N defects and C deposition co-modified g-C3N4, C-g-C3Nx, was prepared by NaOH-assisted sintering and ethanol-assisted hydrothermal treatment. The presence of N defects and C deposition was verified by the XRD, SEM and XPS tests. The N defects changed the band structure of g-C3N4 by lowering down the conduction band position, therefore widening the light absorption range of g-C3N4. In addition, the N defects and C deposition co-modification promotes the charge transfer process of g-C3N4, leading to increased separation efficiency of the photogenerated charge carriers. Therefore, C-g-C3Nx shows enhanced photoelectrochemical cathodic protection performance for the coupled 316L stainless steel. It can provide a photoinduced potential drop of 120 mV and a photoinduced current density of 9.1 mu A cm(-2), which is three times that of pristine g-C3N4.
DOI10.1007/s10854-019-01899-5
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[41676069] ; National Natural Science Foundation of China[41576114] ; National Natural Science Foundation of China[41376126] ; Qingdao Innovative Leading Talent Foundation[15-10-3-15-(39)-zch] ; Qingdao Science and Technology Achievement Transformation Guidance Plan (Applied Basic Research)[14-2-4-4-jch] ; State Key Laboratory for Marine Corrosion and Protection, Luoyang Ship Material Research Institute, China[614290101011703]
WOS Research AreaEngineering ; Materials Science ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000480558400045
PublisherSPRINGER
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.qdio.ac.cn/handle/337002/162355
Collection海洋环境腐蚀与与生物污损重点实验室
Corresponding AuthorChen, Zhuoyuan; Li, Yan
Affiliation1.China Univ Petr, Sch Mat Sci & Engn, 66 Changjiang West Rd, Qingdao 266580, Shandong, Peoples R China
2.Chinese Acad Sci, Inst Oceanol, Key Lab Marine Environm Corros & Biofouling, 7 Nanhai Rd, Qingdao 266071, Shandong, Peoples R China
3.Luoyang Ship Mat Res Inst, State Key Lab Marine Corros & Protect, Wenhai Rd, Qingdao 266237, Shandong, Peoples R China
4.Chinese Acad Sci, Ctr Ocean Mega Sci, 7 Nanhai Rd, Qingdao 266071, Shandong, Peoples R China
5.Pilot Natl Lab Marine Sci & Technol Qingdao, Open Studio Marine Corros & Protect, 1 Wenhai Rd, Qingdao 266237, Shandong, Peoples R China
Corresponding Author AffilicationInstitute of Oceanology, Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Zhang, Qingji,Jing, Jiangping,Chen, Zhuoyuan,et al. Enhanced photoelectrochemical cathodic protection performance of g-C3N4 caused by the co-modification with N defects and C deposition[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2019,30(16):15267-15276.
APA Zhang, Qingji.,Jing, Jiangping.,Chen, Zhuoyuan.,Sun, Mengmeng.,Li, Jiarun.,...&Xu, Likun.(2019).Enhanced photoelectrochemical cathodic protection performance of g-C3N4 caused by the co-modification with N defects and C deposition.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,30(16),15267-15276.
MLA Zhang, Qingji,et al."Enhanced photoelectrochemical cathodic protection performance of g-C3N4 caused by the co-modification with N defects and C deposition".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 30.16(2019):15267-15276.
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